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NM-UW1111-EB-395 - Seoul Viosys

NM-UW1111-EB-395: UV LED Chip
GaN LED Struktur
Wellenlänge: 390-400
Strahlungsleistung: typ. 750mW
Chip Area, 1100µm x 1100µm
Imax. = 700mA
Pulsed forward current: 1000mA
Tj = +125°C von Seoul Viosys UV LED Chip
GaN LED Struktur
Wellenlänge: 390-400
Strahlungsleistung: typ. 750mW
Chip Area, 1100µm x 1100µm
Imax. = 700mA
Pulsed forward current: 1000mA
Tj = +125°C
Manufacturer:
Productgroup: UV-LEDs (Flip-Chip)UV-LEDs (Flip-Chip)
Part Number: NM-UW1111-EB-395

directly to request


Technical data

Datasheet: PDF NM-UW1111-EB-395 | Seoul ViosysOpen datasheet
Min. operating temperature: -30°C
Max. operating temperature: 85°C
Wave Length 395 nm
If 700 mA
Package Dimensions 1,1x1,1 mm
Radiant Flux typ. 825 mW
Spectrum Half Width 12 nm
Forward Voltage 3.3 V

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